Abstract
Simulated scanning-tunneling-microscopy (STM) images of stable and metastable adsorption sites for the O atom on the Si(100) surface have been obtained by first-principles electronic-structure calculations within the local-density approximation. In the simulated STM images of both sites, the positions of O atoms are not seen directly, while the neighboring Si atoms are found to become bright spots. As for the metastable site, the bright spot originating from the surface Si atom moves when the polarity of the tip's voltage is reversed. This phenomenon is due to the electrostatic field of negatively charged O atoms.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
