Abstract
The transfer Hamiltonian method is used to study tunnelling between the subbands of barrier-separated 2D electron systems. Application of the theory is made to a double-barrier semiconductor heterostructure in which a 2D accumulation layer is formed under bias. A region of bistability is found in the voltage dependence of the charge stored in the quantum well and in the accumulation layer. Comparison is made with magneto-oscillation studies of asymmetric double-barrier structures.
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