Abstract
The first-order Raman scattering experiments in the europium chalcogenides are analyzed in terms of both the symmetries of the various magnetic phases and the resonant enhancements associated with the electronic structure. Both a one-electron band model and a localized magnetic exciton model are used for a calculation of the Raman scattering intensity. The parameters of these models are chosen to be consistent with the optical reflectivity and with the observed resonant Raman enhancement. Comparison with experiment is given in terms of a dimensionless plot of the frequency dependence of the Raman intensity for several europium chalcogenides in the ferromagnetic phase. Comparison with the experimental data suggests that the excitonic model for the electronic transitions is responsible for the observed resonant enhancement behavior.
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