Abstract
The Raman tensors for the electric field-induced and wavevector dependent scattering from LO phonons in semiconductors have been calculated near critical points using a perturbation treatment. The resulting expressions have analytic closed forms such that the dependence of the forbidden scattering intensity on the incident photon energy and the applied d.c. electric field can be evaluated from available energy band parameters. The forbidden LO scattering intensity of GaAs in the back scattering configuration has been numerically calculated near the e 1 and E 1 gaps as functions of the incident photon energy and the dc electric field. The result shows strong interference between the two scattering processes. The allowed TO and LO Raman scattering intensities of GaAs were also calculated at a wavelength of 1.06 μm from the SHG and Faust-Henry coefficients, and compared with the forbidden LO intensity.
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