Abstract
Excess carrier lifetimes are calculated under steady state conditions with explicit considerations for transitions between the various states of a multi-charged center. The results obtained are of nearly the same forms as in the usual theory in so far as a phenomenological treatment is concerned. Apparent capture probabilities of the center can be represented by probabilities of various elementary processes, and correspond to total conductances of a certain equivalent circuit. Basing upon these formulae, some studies of dynamical processes are made, and possibilities of relatively large capture cross section of repulsive centers as well as attractive ones are obtained.
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