Abstract
A theory of the temperature variation of the photoluminescence decay in plasma-deposited amorphous Si:H is presented. We use the low temperature lifetime distribution (neglecting diffusion) to obtain the radial distribution function of thermalized electron-hole pairs. Neglecting the effect of temperature on the distribution function, we use the exact solution of the diffusion equation, including tunnelling, to fit the luminescence decay data at higher temperatures. The Coulomb interaction of the electron-hole pair is treated in the prescribed diffusion approximation. We also obtain an estimate of the quantum efficiency vs. electric field at room temperature.
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