Abstract
This paper deals with the uniform plasma injection regime in reversely switched dinistors (RSD) which is similar to the drift double-injection regime in p + nn +-diodes. Such a regime is distinguished as highly efficient and most stable. The anode current retroactive mechanism controlled by the plasma in the collector layer is investigated and criteria of the quasi-diode operation are established. The theory explains the main characteristics of the RSD in both the micro- and submicrosecond range of operation. It also allows the calculation of time dependence of current density and voltage drop. The criteria derived are in good agreement with empirical data.
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