Abstract
AbstractPressure effects on silicon nanocrystallites are calculated using semi-empirical tight-binding and ab-initio local density calculations. Using the confinement model in porous silicon a red shift of the luminescence energy with increasing pressure is obtained. Quantum confinement in BC8 phase silicon nanocrystallites obtained after release of high pressure are also studied. It increases the cluster gap and also enhances the electron-hole radiative recombination rate.
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