Abstract
Plasmonic terahertz detection in a dual-grating-gate field-effect transistor structure with an asymmetric unit cell is studied theoretically and modeled numerically. It is shown that DC bias current flowing in the structure channel strongly affects the detector responsivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
