Abstract
We present a surface integral method to calculate the piezoelectric polarisation potential due to a strained quantum dot (QD) grown on a (111)-oriented substrate. We show that the potential is reduced in a QD compared to a strained quantum well of the same height, but that there still remains a significant polarisation field across (111)-oriented InGaAs/GaAs QD structures. We use the 8-band k.p method to show that these piezoelectric fields must be included to explain the measured interband transition energies in a series of site-controlled QDs with increasing height and In composition.
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