Abstract
The theory of dynamic hot-electron transport instabilities in low-dimensional semiconductor structures is reviewed with an emphasis on the following aspects: (i) General conditions for self-generated oscillatory instabilities in semiconductor none-quilibrium transport are elaborated in the framework of nonlinear dynamic systems, (ii) Real space transfer in modulation-doped heterostructures is investigated. In single and double heterojunctions, and in coupled quantum wires different bifurcation scenarios, including symmetric and nonsymmetric oscillation modes well above the 100 GHz regime, and asymptotic and transient chaos, are predicted. Electrically and optically induced real-space transfer are compared, (iii) Vertical hot-electron transport across a single heterojunction is considered. Bistability between a tunneling and a thermionic emission state, and different self-organized spatio-temporal oscillation modes are found.
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