Abstract
For pt.I see ibid., vol.14, p.21 (1981). The recently introduced random-cell model for topologically disordered systems is used to investigate the low electron-hole states of a doped semiconductor. Making use of a donor-pair approximation the authors find the probability distribution of the matrix elements diagonal in the random-cell representation. Low and intermediate impurity concentrations are considered. The results indicate a complicated evolution of the excitation spectrum.
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