Abstract
In connection with recent high resolution He atom inelastic scattering experiments the probability for resonant one-phonon scattering is calculated within the framework of the distorted wave Born approximation. In this approach the inelastic scattering is treated as a perturbation of the atom-static surface potential eigenstates due to the dynamic atom-phonon coupling. Both the static and the dynamic potentials are derived from semi ab initio atom-ion pair potentials. The calculation takes full account of bound state resonances, the surface corrugation and the crystal lattice dynamics. In comparison with experimental data the theoretical results confirm the recent interpretation of resonant features with respect to the mechanisms of adsorption into and desorption out of specified surface bound states. They also reveal the contributions of Rayleigh and bulk phonon creation and annihilation processes to the inelastic scattering.
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