Abstract
Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent, T 2 -broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity, X (3) ≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.
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Schedule a callMore From: Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences
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