Theory of nonlinear effects in semiconductors with a nondiffusion approximation for acoustic phonons

Abstract

Momentum and energy balance equations in impurity semi-metals and degenerate semiconductors are derived and investigated in a nondiffusion approximation for the acoustic phonons with arbitrary heating and entrainment of electrons and phonons taken into account. It was shown that the diffusion approximation is not satisfied even for relatively weak electrical fields. In cases of thermal entrainment and no heating of the phonons, cases are possible when the electron temperature becomes equal to and less than the lattice temperature, which is associated with radiation obtained from the energy field by electrons in the form of acoustic phonons at a point of acoustic instability. If mutual entrainment and heating of electrons and phonons occurs then the crystal boundaries are the main channel of energy and momentum relaxation. Necessary conditions delimiting the strong changes of all the galvano- and thermomagnetic effects at a point of acoustic instability are found in every specific case.