Abstract
The electronic states associated with anion antisite defects (an anion on a cation site) and also with the corresponding ideal cation vacancies have been calculated for the III–V semiconductors GaAs, GaP, A l As, InP, and InAs. The calculations are based on tight binding Hamiltonians, and a novel recursion method is used to obtain the local densities of states. The nature of the localized states is discussed, and the results are compared to recent experimental data.
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