Theory of High Field Transport in β-Ga2O3

Abstract

We present a comprehensive review of high-field transport properties in an emerging and trending ultra-widebandgap semiconductor β-Ga2O3. The focus is on the theoretical understanding of the microscopic mechanisms that control the dynamics of farfrom-equilibrium electrons. A manifold of density functional calculations and Boltzmann theory based transport formalism unravels the behavior of the electron distribution under a varied range of external electric fields. The key high-field transport properties that govern electronic device performance, like velocity and ionization co-efficients, are enlightened in detail with physical insights. Anisotropies in the above transport co-efficients are probed from the microscopic investigation of bandstructure, electron-phonon interactions, and electron-electron interactions.