Abstract
Intense photoexcitation of a semiconductor using femtosecond laser pulses affects its optical properties. We consider the transient photoinduced changes Δε to the dielectric function ε of bulk Ge after excitation with 100-fs laser pulses at 1.5 eV creating a carrier density of 4×10 18 cm −3 due to three mechanisms: (i) diffusion of carriers from the surface into the bulk, (ii) relaxation of carriers in momentum space, and (iii) many-body effects, including band gap renormalization, collisional broadening, screening of the excitonic Coulomb enhancement, and band filling.
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