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Abstract
Using methods similar to those employed to treat the gas discharge, a theory is developed to explain the multiplication of electrons (and holes) in Si and Ge junctions. The calculations take into account the effects of electron-phonon and pair-producing collisions on the distribution function. In Si, the only element for which complete measurements have been made, the calculated ionization rate versus field curve is in agreement with experiment if one assumes a mean free path of 200A for interactions between electrons and optical phonons.
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