Abstract
Switching phenomena in amorphous semiconductors have been analyzed in a thermoelectric model. We have been able to obtain current-voltage characteristics from very general mathematical considerations concerning existence, uniqueness, local and global stability, bifurcation, and asymptotic behavior of the non-linear equations for temperature and field. Similar considerations show taht switching proceeds by the nucleation and growth of a hot spot in the interior. Detailed quantitative results are presented for simple models.
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