Abstract
Reactions conjectured to occur during the cooldown of GaAs grown from the melt are presented. These are used to fit existing data on the dependence of various concentrations (carrier, EL2, and EL5) on melt composition in crystals grown from a Ga-rich melt doped with silicon. Acceptable fits are based on the following model assumptions: (1) EL2 is AsGaVGa, (2) EL5 is the acceptor complex SiGaVGa, and (3) freeze-out of the reaction VGa+AsGaVAs=AsGaVAsVGa during cooldown is responsible for a large VGa concentration and a concomitant restricted EL2 concentration in the crystal.
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