Abstract
The lineshape is studied in the simplest approximation free from the difficulty of divergence caused by a singular nature of the system. Characteristics of the linewidth are obtained for both short- and long-ranged scatterers. By assuming δ-potential scatterers, the lineshape is calculated explicitly as a function of the applied magnetic field in an n -channel inversion layer on Si (100) surface. At low temperatures, a Shubnikov-de Hass type oscillation appears in the lineshape. At high temperatures, it disappears and the lineshape becomes asymmetric around the resonance magnetic field.
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