Abstract
AbstractIn this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/LnP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented.
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