Abstract
A model for a resonatorless absorptive optical bistability in laser-excited semiconductors is presented. The intensity-dependent absorption coefficient is calculated microscopically taking into account band-gap renormalization and band filling due to formation of an electron-hole plasma. The spatial and temporal variations of the carrier density and the light intensity in the crystal are calculated from solutions of their coupled transport equations. An intrinsically bistable propagation mechanism for a density kink is found, which gives rise to additional structures in the bistable hysteresis loop. The influence of different carrier diffusion coefficients on the results is calculated.
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