Theory for voltage dependent series resistance in silicon solar cells

Abstract

A distributed parameter model has been proposed for p- n junction solar cells to account for the variation of series resistance due to the forward biasing of the p- n junction under external injection condition. The theoretical expression developed using this model predicts a coupling between base and emitter via depletion layer. This coupling becomes stronger with increasing bias and is found to be responsible for the observed decrease of series resistance with rising injection level. Numerical results of our theory are found to agree well with those obtained from experiments.