Abstract
A generalized theoretical model of intensity modulated photocurrent spectroscopy (IMPS) for the random morphology in a dye sensitized solar cell (DSSC) under uniform illumination is developed. The generalized IMPS expression for the disordered semiconducting/conducting glass interface of a DSSC is obtained in term of power spectral density of roughness. Influence of surface roughness on the dynamic response of DSSC originate due to the coupling of characteristic phenomenological and morphological length scales. A detailed analysis of IMPS response is performed over finite self- affine fractals to highlight roughness induced anomalies and cause of photocurrent enhancement. The IMPS of a rough DSSC exhibit three characteristic frequency regimes: lifetime of charge carrier dependent low frequency regime, surface irregularity dependent intermediate power-law regime and diffusion controlled high frequency regime. Finally, our theory facilitates the understanding of dynamics and kinetics of charge carriers under the influence of ubiquitous surface disorder.
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