Abstract
We investigated the growth kinetics of layers of W2Zr phase on tungsten interacting with copper-silicon melts at 1150°C. We determined the limiting value of the zirconium content in the copper melt (40.1 at. %). Below this value, we do not observe the indicated layer. We discuss the mechanism of reactive diffusion in the system and the effect of zirconium additives on the liquid phase sintering of the copper-tungsten materials. We have discovered well-defined differences between the growth rates of the layers on polycrystalline and single-crystal specimens of tungsten.
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