Theory and optimization of the power super junction device

Abstract

Based on the optimization idea of the electric field from the surface to the bulk, this paper summarizes the basic theory and the two types of analytical optimization methods of the super junction (SJ) device. The essential difference between the SJ and the conventional power MOS structure is: the former is the junction-type voltage sustaining layer with the periodic N/P dopings and the later is the resistance-type voltage sustaining layer with the single conductive type. The positive and negative charges satisfying the charge balance are introduced into the SJ voltage sustaining layer, which causes the two-dimensional electric field to realize the optimization from the surface to the bulk. The paper gives the concepts of the charge and potential electric fields, analyzes the non-full depletion and full depletion modes, introduces the mechanism of the transient process and forward biased safe operating area, discusses the equivalent substrate model and the optimized substrate conditions. Finally, the minimum specific on-resistance R on,min optimization methodology is proposed to give the R on,min for a given breakdown voltage V B. R on of the SJ is decreased significantly compared to that of the conventional power MOS with the same V B. The R on -V B relationship changes from the R on∝ V B2.5 to V B1.32 even V B1.03, leading to the SJ as the “milestone in high voltage power MOS device”