Theory and experiments on surface 1/f noise

Abstract

A theoretical low-frequency noise model for the epitaxial-channel surface field-effect structure is presented where random modulation of the channel conductance arises from fluctuation of charges trapped at the oxide trap states near the Si-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface. In this model, charge fluctuation in the oxide traps arises from carrier tunneling between the fast interface surface states and the oxide trap states. A second fluctuation, at higher frequencies, arises from the random thermal emission and capture of electrons and holes at the fast interface states through the thermal or Shockley-Read-Hall process. Different oxide trap densities were introduced into the interface region of the metal-oxide-silicon field-effect structures using a carefully controlled and reproducible oxygen heat treatment technique. Energy distributions of the oxide trap densities are obtained from capacitance measurements. Humps are observed between the flat band and the onset of strong surface inversion (lower half of the bandgap) in both the noise power and the oxide trap density versus gate voltage (or surface band bending) plots. Theoretical noise power calculations using the experimental oxide trap density profile from the capacitance-voltage data agree very well with the experimental noise humps in both magnitudes and fine structures. It is shown that the frequency spectra of noise depend strongly on the oxide trap density profile in the oxide. It is suggested that the oxide traps are due to the excess oxygen at the SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -Si interface.