Abstract
The trade-off relationships between resolution, line edge roughness (LER), and sensitivity have been intensively investigated for the resist materials and processes used for extreme ultraviolet lithography. However, their relationships of the resist materials and processes in the photomask production using the electron beam (EB) lithography have not been investigated in details. In this study, the dependences of chemical gradient on the half-pitch of line-and-space patterns, exposure pattern width, and sensitizer concentration were investigated using a simulation on the basis of the sensitization and reaction mechanisms of chemically amplified EB resists. The chemical gradient is an indicator of LER. The relationships between resolution, LER, and sensitivity were formulated.
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