Theoretical study on the performance of InxGa1−xAs/GaAs p-i-n quantum dot solar cell considering real cubic dots

Abstract

Quantum dot solar cells (QDSC) have been extensively studied by various researchers for the last 15 years as they have much higher conversion efficiency and it is capable of producing higher short-circuit current density in comparison with the conventional crystalline solar cells. A theoretical study was carried out on the InxGa1 − xAs / GaAs p-i-n QDSC considering absorption spectra of real cubic quantum dots embedded in the intrinsic region. We incorporated the absorption coefficient of the cubic quantum dot ensemble considering finite potential barriers; additionally, here, we considered the nonuniform size distribution described by the Gaussian function. The contributions of the photocurrent density from different regions of the cell were investigated. The photocurrent density of the intrinsic region was studied by varying the height of the quantum dots and by varying the size dispersion factor. Also, the total short-circuit current density and the power conversion efficiency of such photovoltaic devices were calculated, and some significant results were obtained.