Abstract
The role of edge termination is theoretically studied for the growth direction selectivity in chemical vapor deposition of graphene heterostructures with hexagonal boron nitride. It is found that the graphene island with hydrogen-free edge and the hexagonal boron nitride island with hydrogen-terminated edge induces the lateral and the vertical growth of the heterostructures we have experimentally observed. The mechanism of the different edge terminations is also discussed based on the H adsorption kinetics.
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