Theoretical study on photoelectric properties of ferroelectric photovoltaic perovskite CsGeBr3 based on first-principle calculations

Abstract

Ferroelectric photovoltaic materials have attracted great attention because of their unique photoelectric conversion mechanism, high photo-generated voltage, and adjustable polarization intensity. Traditional ferroelectric oxide perovskites such as BaTiO3, BiFeO3, and Pb(ZrTi)O3 have attracted much attention but they are not suitable as light absorbing layers in solar cells, due to the large optical bandgap, low light absorption rate, and small photogenerated current. Therefore, it is necessary to seek prominent materials with both ferroelectric and suitable band gaps. Recently, the evidence of ferroelectricity in the typical three-dimensional all-inorganic halide perovskites CsGeX3, with band gaps of 1.6 eV to 2.3 eV has been confirmed. However, the spontaneous polarization of ferroelectric perovskite CsGeX3 is ∼10 to 20 μc cm−2 which is weaker than that of ABO3 (∼26 to 75 μc cm−2). Strain engineering has a significant influence on the properties of semiconductor materials by controlling the lattice scaling and the internal atomic spacing. Hence, in this work, strain engineering is introduced to adjust the ferroelectric polarization and the photoelectric properties of ferroelectric perovskite CsGeBr3. The calculated results show that when the applied compressive strain increases from 0% to −4%, the spontaneous polarization of ferroelectric perovskite CsGeBr3 increases from 14.23 μc cm−2 to 51.61 μc cm−2, and the band gap reduces from 2.3631 eV to 1.5310 eV. The effective mass of electrons and holes gradually reduces, exciton binding energies decrease from 48 meV to 5 meV, and the optical absorption coefficient is strongly enhanced from 3 × 105 cm−1 to 5 × 105 cm−1 in the visible range. Besides, the power conversion efficiency(PCE) of CsGeBr3 is significantly increased from 16.95% to 26.77%. Therefore, the results indicate that the application of compressive strain can increase the ferroelectric polarization and enhance the original photovoltaic performance of ferroelectric perovskite CsGeBr3. Our theoretical calculations can provide useful insights and beneficial guidance into experimental studies of ferroelectric perovskites in photoelectric applications.