Abstract
In this work, the structure of In x Ga 1− x N/GaN quantum dots solar cell is investigated by solving the Schrödinger equation in light of the Kronig–Penney model. Compared to p–n homojunction and heterojunction solar cells, the In x Ga 1− x N/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.
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