Abstract
Low-chirp lasing operation in semiconductor lasers is addressed in a theoretical investigation of the possibility of reducing the linewidth enhancement factor ( alpha factor) in quantum-well (QW) lasers to zero. It is shown that in reducing the alpha factor it is essential that lasing oscillation be around the peak of the differential gain spectrum, not in the vicinity of the gain peak. The condition for such lasing oscillation is analytically derived. The wavelength dependence of the material gain, the differential gain, and the alpha factor are calculated in detail taking into account the effects of compressive strain and band mixing on the valence subband structure. The effect of p-type modulation doping in compressively strained QWs is discussed. It is shown that the alpha factor, the anomalous dispersion part in the spectrum, crosses zero in the region of positive material gain, which makes is possible to attain virtual chirpless operation by detuning. >
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