Abstract
We developed a effective tunneling model to study the electric-pulse-induced resistive switching (EPIR) effect in PCMO films, and find that the tunneling probability of the charge transport at interfaces plays an important role in the EPIR effect. We also study the nonvolatile characteristics and the hysteretic current-voltage curve in the PCMO films, the calculated results consistent with the recent experimental data. This electric-pulse- induced resistive switching effect at room temperate has excellent potential of application.
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