Year-end Sale % OFF 
Abstract
We theoretically studied the relationship between quantum energy states and structural parameters of an InGaAs/GaAs quantum dot (QD) buried in strained InGaAs, emitting at 1.1 to 1.4 em. The crystal distortion of the buried QD structure in three dimensions was computed based on the three-dimensional finite element method. Under the computed strain fields, the Schrödinger equation was solved to obtain wavefunctions and eigenenergies. By calculating the dependence on structural parameters, we investigated the controllable range of the ground state energy and the energy separation between the ground state and the first excited state. We found that the energy separation exhibited a maximum value as a function of QD composition, enabling us to identify the composition of the QD structure. The effects of the burying layer composition and QD diameter were also investigated to expand the controllable range of the state energy. We also showed that the wavefunction symmetry was improved by burying the QD in the InGaAs layer. Our results will be useful in developing advanced devices for optical telecommunications and quantum information technology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
