Abstract
The band gaps and the absorption properties of InxGa1-xAs used as the infrared-extension negative electron affinity (NEA) photocathode are discussed based on first principle. The analysis about the band gaps of the InxGa1-xAs with different In component proves that the models and the computational accuracy are reliable. It is found that the absorption peak P1 moves to the high energy region and the absorption coefficient becomes smaller with the increase of the In component x when the photon energy is less than 4 eV. Absorption peak P3 moves to the high energy region and the absorption coefficient becomes bigger with the increase of the In component x when the photon energy is more than 6 eV. The analysis about the absorption property offers a theoretical foundation for the design of the NEA InxGa1-xAs photocathode according to the photoelectric emission mechanism.
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