Theoretical study of transport property in InAsSb quantum well heterostructures

Abstract

Theoretical studies of transport properties in InAsSb-based quantum well heterostructures are presented. The concentration of two-dimensional electron gas is calculated self-consistently from our improved Schrödinger-Poisson model by taking into account of nonparabolicity effect and strain effect, and the results are used to obtain the electron mobility. All major scattering mechanisms by acoustic phonon, polar optical phonon, remote ionized impurity, background impurity, interface roughness, and alloy disorder have been included in our calculation. Particularly, dislocation scattering, intrasubband scattering, and intersubband scattering, which are always neglected in heterostructure systems, are considered. The calculated electron mobility is proved to be in good agreement with the experimental data for modulation-doped AlSb/InAsSb quantum well heterostructures. With a view to optimize the transport property, quantum well width, spacer thickness, barrier thickness, and remote doping concentration for AlSb/InAsSb heterostructures are discussed to examine their effect on total electron mobility. Intrinsic electron mobility exceeding 40 000 cm2/Vs is predicted at 300 K for AlSb/InAs0.4Sb0.6 heterostructures which is dominated by a combination of polar optical phonon scattering, remote ionized impurity scattering, and interface roughness scattering.