Abstract

Emergence of inorganic metal halide perovskites as multifunctional optoelectronic materials are due to their exceptional tunability in optoelectronic properties. This study sought to enhance the physical and mechanical properties of lead-free FrGeI3 perovskites by introducing transition metal dopants (Mn, Co, and Ni). First-principle calculations based density functional theory (DFT) have been utilized to illustrate the impact of transition-metal doping on the structural, electronic, and light-matter interaction properties of FrGeI3. The study found that transition metal doping in FrGeI3 perovskites leads to an increase in the electronic bandgap leading to semiconducting behavior after phase stability confirmation. This study provides a sound understanding of the underlying mechanisms of transition metal doping in Fr-contained halide perovskites, which could pave the way to the headway of new optoelectronic and biomedical devices based on these materials.

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