Abstract
, 1921 (1996)]. The resistance versus the separation between the STM tip and the surface has been calculated, the relaxation of the Xe atoms being calculated using molecular dynamics. Two major deviations from the well-known exponential decrease of the junction resistance have been found. The first is due to an electronic interference effect. With a tight binding model, we showed that this effect comes from the destructive interference between two different tunneling paths. The second deviation is due to the sideways motion of one Xe atom under the tip compression.
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