Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals

Abstract

For the development of the crystal pulling process for 450 mm-diameter defect-free Si crystals, the impact of thermal stress on intrinsic point defect behavior during crystal growth is studied using extensive density functional theory calculations. The impact of thermal stress on the so-called Voronkov criterion and on void formation is clarified and compared with published experimental results.