Abstract
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT). The plasma wave arising from the RTD-gated HEMT is equivalent to active transmission lines and induces negative differential conductance (NDC) of the oscillator. The proposed RTD-gated HEMT oscillator is more compact and has higher oscillation frequency than the transmission line loaded traditional RTD oscillator duo to plasma wave effect. This paper analyses and calculates the oscillation conditions, the relationships between device structures, oscillation frequency and the output power of the oscillator. The presented work may provide a new concept for fabricating terahertz oscillator.
Highlights
Terahertz (THz) technology is the frontier of photonics and electronics
The oscillator based on transmission line loaded resonant tunnel diode (RTD) is one of the most potential candidate devices for terahertz oscillators.[8,9,10]
This paper discusses the possibilities of terahertz active transmission line oscillator based on RTD-gated high electron mobility transistor (HEMT)
Summary
Terahertz (THz) technology is the frontier of photonics and electronics. It has attracted a considerable attention in various fields, including imaging, communication, biotechnology, homeland security and ultra-fast computing.[1] Plasma-wave electronics material is especially promising material systems for the development of terahertz applications,[2] including amplifier,[3] detector,[4] modulator,[5] and oscillator.[6] On the other hand, resonant tunnelling diodes (RTDs) are a kind of quantum effect devices with excellent performance in negative differential conductance (NDC) and high-speed.[7] The oscillator based on transmission line loaded RTD is one of the most potential candidate devices for terahertz oscillators.[8,9,10] the fabrication of high oscillation RTD Oscillator is still a difficult challenge.[11,12,13]. The RTD-gated HEMT is believed to be a key device of fabricating terahertz oscillator. This paper discusses the possibilities of terahertz active transmission line oscillator based on RTD-gated HEMT
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