Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range

Abstract

The present work aims to investigate the effect of strain on the optoelectronic properties of GaNAsBi/GaAs (100) heterostructure by using the band anti-crossing model coupled with k.p and Pikus-Bir theories. For both tensile and compressive strain cases, the addition of nitrogen mainly affected the GaNAsBi/GaAs band gap energy, while the spin-orbit splitting variation still dominated by the effect of the bismuth. As a direct result of strain, a splitting was established between valence band levels. Carriers effective masses studied in the [100] and [001] directions (parallel and perpendicular) were found to be anisotropic. Moreover, preferential transitions were achieved with a specific well width, Bi and N amounts. It is established that (x = 0.01, y = 0.06) is the more suitable couple of contents for the development of GaAs/GaNxAs1-x-yBiy/GaAs single QWs compounds emitting in infrared range.This work provides parameters, such as oscillator strength and absorption coefficient to develop bismide GaAs-based alloys for photovoltaic devices.