Abstract
AbstractUsing clusters with 17 atoms the electronic structure of Ga and Sb single vacancies is studied in GaSb, using the MS‐Xα method. For the Ga vacancy an impurity level of t2 symmetry is obtained, occupied with three electrons, and in the case of the Sb vacancy two impurity levels are obtained, one a fully occupied a1 level and a t2 level occupied with one electron.
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