Theoretical study of relationships among resolution, line width roughness, and sensitivity of chemically amplified extreme ultraviolet resists with photodecomposable quenchers

Abstract

The resolution of chemically amplified extreme ultraviolet (EUV) resists has reached 13–15 nm. However, the line width roughness (LWR) and sensitivity are still inadequate for their application to the high-volume production of semiconductor devices. In this study, the performance of chemically amplified resists with photodecomposable quenchers were investigated by simulation based on the sensitization and reaction mechanisms of chemically amplified EUV resists. The relationships among resolution, LWR, and sensitivity were evaluated in the half-pitch ranges of 12–16 nm. The requirements for 20 mJ cm−2 and 10% critical dimension (CD) LWR are considered to be within the physical limits in the half-pitch range of 12–16 nm when an optical image with a contrast of 1 (normalized image log slope of π) is given. Depending on the given image quality and the required sensitivity, the optimization of sensitizer concentration and the increase in resist absorption coefficient and/or effective reaction radius for deprotection are required to achieve 10% CD LWR.