Abstract
A systematic theoretical study of the structural properties and stabilities for neutral Si n O (n = 1-13) clusters and their ions has been carried out using the full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method and the Amsterdam Density Functional (ADF) program with TZ2P basis set in conjunction with self-consistent field (SCF). Their ionization potentials (IPs), electron affinities (EAs), dipole moments μ, constant volume heat capacity Cv are computed. Based on the Mulliken population analyses, it is found that part of electronic charge is transferred from the Si atoms into the oxygen atom. Compared with other structures, the adsorption structures with an edge or a surface O atom are more stable. Calculations also show that the Si n O clusters with larger HOMO–LUMO gap exhibit high stability.
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