Abstract
The study of valence fluctuation is made on TmSe compound from simulated theoretical x-ray powder diffraction data. The theoretical lattice parameter is in agreement with experimental parameter. The amount of charge transfer is deduced as 0.23ē which proves the presence of intermediate valence fluctuation in the system. Further a theoretical Study is made on TmSe1−xTex (x = 0.5, 0.77, 0.83 and 1.00) to deduce electrical transport properties by using only two parameters, lattice constant and energy gap. The calculated transport properties electrical resistivity, carrier mobility, carrier concentration, carrier effective mass and dielectric constant are compared with the available experimental data which agrees with each other.
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