Abstract
The conduction band edge formation in GaP1−xNx alloys is theoretically studied using a tight-binding method. The electronic structure of GaP1−xNx ordered alloys whose units-cell size is a × a × na (n=1–5) is calculated. The calculation confirmed that the conduction band edge formation in Ga1−xNx alloys originates from the formation of the A line. Localization at the N atoms is also discussed.
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