Abstract

The carrier mobility of two-dimensional tetragonal carbon allotrope (T-CA) from porous graphene is investigated by first-principles calculations. T-CA can be constructed from divacancy and Stone–Thrower–Wales defects from graphene. T-CA is a direct semiconductor with a band gap of 0.4 eV at Γ point. T-CA possesses a high carrier mobility of the order of 104 cm2 V–1 s−1. As our study demonstrates, T-CA has potential applications for next-generation electronic materials.

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